View 08090_37615.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P-1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
0 55 Efficiency 50 45 40 35 30 400 kHz 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90
*
Modulation Spectrum (dB)
Drain Efficiency (%)
* * * *
PTF080901E Package 30248
Output Power (dBm)
PTF080901F Package 31248 ESD: Electrostatic discharge sensitive device--observe handling precautions!
RF Characteristics at TCASE = 25C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 700 mA, P OUT = 45 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.5 -62 -74 18 40
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps
Min
17 40 --
Typ
18 42 -32
Max
-- -- -29
Unit
dB % dBc 2004-04-05
D
IMD
PTF080901
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 650 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.1 3.2 --
Max
-- 1.0 -- 4 1.0
Unit
V A V V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 335 1.9 -40 to +150 0.52
Unit
V V C W W/C C C/W
Typical Performance (measurements taken in production test fixture)
EDGE EVM Performance
V DD = 28 V, IDQ = 700 mA, f = 959.8 MHz
-20
9 90 80
Modulation Spectrum
P OUT = 40 W, f = 959.8 MHz
2.1
EVM RMS (average %) .
EVM RMS (average %) .
1.9 1.7 1.5
EVM
-30 -40 -50 400 KHz -60 -70 600 KHz -80 -90 -100 0.97
Modulation Spectrum (dBc)
8 7 6 5 4 3 2 1 0 36 38 40 42 44 46 48 50 EVM Efficiency
60 50 40 30 20 10 0
1.3 1.1 0.9 0.7 0.5 0.47
0.57
0.67
0.77
0.87
Quiescent Current (A)
Output Power (dBm)
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 2 2004-04-05
Drain Efficiency (%)
70
PTF080901
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz
0 -10 -20
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
V DD = 28 V, IDQ = 650 mA
18 80
17
Gain
70
IMD (dBc)
Gain (dB)
-30 -40 -50 -60 -70 -80 43 45
3rd Order
16
Efficiency
60
5th 7th
15
Output Pow er
50
47
49
51
14 860
880
900
920
940
40 960
Output Power (dBm), PEP
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V DD = 28 V, f1 = 959, f2 = 960 MHz
-20
Broadband Performance
V DD = 28 V, IDQ = 650 mA, POUT = 45 W
60 0 -3 Efficiency 40 30 20 Gain 10 860 Return Loss -6 -9 -12 -15 960
Gain (dB), Efficiency (%)
-25 -30 480 mA
50
IMD (dBc)
-35 -40 -45 -50 -55 -60 39 41 43 45 47 49 51 820 mA 650 mA
880
900
920
940
Output Power (dBm), PEP
Frequency (MHz)
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 3 2004-04-05
Return Loss (dB)
Efficiency (%), POUT (dBm)
PTF080901
Typical Performance (cont.)
Power Sweep
VDD = 28 V, f = 960 MHz
19.0 18.5 IDQ = 820 mA
20 19 18 17 16 15
Gain & Efficiency vs. Output Power
V DD = 28 V, IDQ = 650 mA, f = 960 MHz
70 Gain 60 50 40 30 20 Efficiency 10 40 43 46 49 52
18.0 17.5 17.0 16.5 37 39 41 43 45 47 49 51 53 IDQ = 480 mA
IDQ = 650 mA
14
Output Power (dBm)
Output Power (dBm)
Output Power (at 1 dB Compression) vs. Supply Voltage
IDQ = 650 mA, f = 960 MHz
52.0
IS-95 CDMA Performance
V DD = 28 V, IDQ = 700 mA, f = 880 MHz
60 50 -40 -45 ACP FC - 0.75 MHz -50 -55 Efficiency 20 10 ACPR FC + 1.98 MHz -60 -65 -70 40 41 42 43 44 45
Drain Efficiency (%)
51.5
40 30
51.0
50.5
50.0 24 26 28 30 32
0
Supply Voltage (V)
Output Power (dBm), Avg.
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 4 2004-04-05
Adjacent Channel Power Ratio (dBc)
Output Power (dBm)
Drain Efficiency (%)
Power Gain (dB)
Gain (dB)
PTF080901
Typical Performance (cont.)
Three-Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 700 mA, f = 880 MHz
50 45 ACP Up ACP Low ALT Up -44
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage. Series show current.
1.03 1.50 A 3.00 A 4.50 A 1.01 1.00 0.99 0.98 0.97 0.96 -20 6.00 A 7.50 A 9.00 A
40 35 30 25 20 15 39 40 41
-50 -53 -56 Efficiency -59 -62 -65
Normalized Bias Voltage
-47
1.02
Drain Efficiency (%)
Adjacent Channel Power Ratio (dBc)
42
43
44
45
0
20
40
60
80
100
Output Power (dBm), Avg.
Case Temperature (C)
Broadband Circuit Impedance
D GE NE
Z0 = 50
G S
- WAVELE NG THS
Z Load
980 MHz
TOW ARD LOAD GTHS EL EN WAV
0. 0
0.1
Frequency
MHz 860 920 940 960 980
Z Source
R 2.50 2.67 2.79 2.94 2.91 jX -1.09 -0.43 -0.35 0.12 0.37 R
Z Load
jX -1.08 -0.32 -0.21 0.27 0.53 1.98 1.99 1.87 1.85 1.79
860 MHz
860 MHz
0 .1
All published data at TCASE = 25C unless otherwise indicated. Data Sheet 5 2004-04-05
---
0.2
0.1
Z Source
Z Load
TOW AR
D
Z Source
980 MHz
PTF080901
Test Circuit
VDD
QQ1 LM7805 R7 3.3 kV C21 0.001 F R3 1.2 kV Q1 BCP56 C22 0.001 F R4 1.3 kV C23 0.001 F R5 10 kV R6 22 kV R1 10 V R2 5.1 kV C3 33 pF C7 33pF C8 1F L1 C1 10 F, 35 V C2 0.1 F 50 V
+
+C9
10F 35V
C10 0.1F 50V
+ C11
10F 35V
l4
DUT RF_IN
l7
C12 2.2pF C15 33pF
l1
C4 33pF
l2
l3
C5 4.3pF
l5
C6 6.2pF
l6
l9
C13 1.4pF
l10
l11
C14 0.5pF
RF_OUT
l8
L2 C16 33pF C17 1F
+ C18
10F 35V
C19 0.1F 50V
+ C20
10F 35V
080901_sch
Test Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 PTF080901 0.76 mm. [.030"] thick,
r = 4.5
LDMOS Transistor 2 oz. copper Dimensions: L x W (mm.) 12.83 x 1.35 17.27 x 1.35 9.14 x 1.35 50.80 x 0.75 9.27 x 16.26 14.73 x 15.24 22.61 x 1.27 16.13 x 15.24 22.35 x 2.16 4.95 x 1.37
Rogers TMM4 Dimensions: L x W (in.) 0.505 x 0.053 0.680 x 0.053 0.360 x 0.053 2.000 x 0.030 0.365 x 0.640 0.580 x 0.600 0.890 x 0.050 0.635 x 0.600 0.880 x 0.085 0.195 x 0.053
Electrical Characteristics at 960 MHz 0.075 , 50 0.101 , 50 0.053 , 50 0.289 , 73.66 0.061 , 7.48 0.097 , 7.93 0.132 , 52.47 0.105 , 7.93 0.134 , 38.02 0.029 , 50
Data Sheet
6
2004-04-05
PTF080901
Test Circuit (cont.)
VGS
C11 C1 C2
+ +
R6 R1 R2
1 00 5 12
LM R4 R3 Q1
QQ1 C22
10 3 5V
R7
10 35V
R5 C23
C21
VDD
C7 C8 L1 C10
+
10 3 5V
C3
C9 C12 C14 C15
RF_IN
C4 C5 C13 C16 C17 C18
10 3 5V
RF_OUT
C6
C19 L2
VDD
+ 10
+
080901_assy
35 V
C20
Reference Circuit1 (not to scale) Component C1, C9, C11, C18, C20 C2, C10, C19 C3, C4, C7, C15, C16 C5 C6 C8, C17 C12 C13 C14 C21, C22, C23 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Description Capacitor, 10 F, 35 V Capacitor, 0.1 F, 50 V Capacitor, 33 pF Capacitor, 4.3 pF Capacitor, 6.2 pF Capacitor, 1 , 50 V Capacitor, 2.2 pF Capacitor, 1.4 pF Capacitor, 0.5 pF Capacitor, 0.001 F, 50 V, 0603 Ferrite, 6 mm Transistor Voltage Regulator Resistor, 10 ohms, 1/4 W, 1206 Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Resistor, Variable, 10 k-ohms, 1/4 W Resistor, 22 k-ohms, 1/10 W, 0603 Resistor, 3.3 k-ohms, 1/4 W, 1206 Manufacturer Digi-Key Digi-Key ATC ATC ATC Digi-Key ATC ATC ATC Digi-Key Philips Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment Tantalum TE Series SMD PCS6106TR-ND P4525-ND 100B 330 100B 4R3 100B 6R2 19528-ND 100B 2R2 100B 1R4 100B 0R5 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 P10ECT-ND P5.1KECT-ND P1.2KGCT-ND P1.3KGCT-ND 3224W-103ETR-ND P22KGCT-ND P3.3KECT-ND
1Gerber files for this circuit are available on request.
Data Sheet
7
2004-04-05
PTF080901
Ordering Information
Type PTF080901E PTF080901F Package Outline 30248 31248 Package Description Thermally enhanced, flange mount Thermally enhanced, earless Marking PTF080901E PTF080901F
Package Outline Specifications Package 30248
(45 X 2.72 [.107])
C L
D
9.78 [.385] 19.43 0.51 [.765.020]
2X 4.830.51 [.190.020]
S
LID 9.40 +0.10 C -0.15 L +.004 [.370 -.006 ]
G
2X 12.70 [.500] 27.94 [1.100] 1.02 [.040] 19.810.20 [.780.008]
2X R1.63 [.064] 4X R1.52 [.060]
SPH 1.57 [.062] 3.760.38 [.142.015]
0.0381 [.0015]
-A0.51 [.020]
34.04 [1.340]
P K G _248_0
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
8
2004-04-05
PTF080901
Package Outline Specifications Package 31248
( 45 X 2.72 [.107]) 4.830.51 [.190.020]
C L
D
9.78 [.385]
LID 9.40+0.10 -0.15 [.370+.004 ] -.006
C L
19.430.51 [.765.020]
G
2X 12.70 [.500]
SPH 1.58 [.062]
19.810.20 [.780.008]
0.51 [.020] 1.02 [.040]
0.0381 [.0015] -A-
S
3.610.38 [.142.015] 20.57 [.810]
P K G _248_1
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
9
2004-04-05
PTF080901 Confidential - Limited Internal Revision History: 2004-04-05 Previous Version: 2004-01-02, Data Sheet Page Subjects (major changes since last revision) 1,8,9 6,7 Add information about PTF080901F, new package outline diagrams Circuit information updated.
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2004-04-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10

▲Up To Search▲

Price & Availability of 08090

	To Download 08090 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .